Display panel and manufacturing method thereof, and display device

ABSTRACT

A display panel and a manufacturing method thereof, and a display device are provided. The display panel includes: a substrate; a plurality of light-emitting elements and an encapsulation layer disposed on the substrate, with the plurality of light-emitting elements located between the encapsulation layer and the substrate; a transfer layer disposed on a side of the encapsulation layer away from the substrate and bonded to the encapsulation layer, with an adhesive force between the transfer layer and the encapsulation layer greater than that between an organic adhesive layer and the encapsulation layer, and the organic adhesive layer configured to react chemically under a preset catalytic condition to be formed to the transfer layer; and a touch structure (40) disposed on a side of the transfer layer away from the substrate and configured to detect occurrence of a touch action.

CROSS-REFERENCE TO RELATED APPLICATION

This is a National Phase Application filed under 35 U.S.C. 371 as anational stage of PCT/CN2021/080166, filed on Mar. 11, 2021, anapplication claiming the benefit of the Chinese patent application No.202010359499.0 filed on Apr. 29, 2020 and entitled “DISPLAY PANEL ANDMANUFACTURING METHOD THEREOF, AND DISPLAY DEVICE”, the content of eachof which is hereby incorporated by reference in its entirety.

TECHNICAL FIELD

The present disclosure relates to the field of display technology, andin particular, to a display panel and a manufacturing method thereof,and a display device.

BACKGROUND

With the development of organic light emitting diode (OLED) displaytechnology, OLED display devices have been widely used. In order to meetrequirements of users on product thickness and touch experience, in amanufacturing process, a touch function layer is disposed on anencapsulation layer of an OLED display panel.

SUMMARY

The embodiments of the present disclosure provide a display panel and amanufacturing method thereof, and a display device.

According to a first aspect of the present disclosure, there is provideda display panel, including:

a substrate;

a plurality of light-emitting elements and an encapsulation layerdisposed on the substrate, with the plurality of light-emitting elementslocated between the encapsulation layer and the substrate;

a transfer layer disposed on a side of the encapsulation layer away fromthe substrate and bonded to the encapsulation layer, with an adhesiveforce between the transfer layer and the encapsulation layer greaterthan that between an organic adhesive layer and the encapsulation layer,and the organic adhesive layer configured to react chemically under apreset catalytic condition to be formed to the transfer layer; and

a touch structure disposed on a side of the transfer layer away from thesubstrate and configured to detect occurrence of a touch action.

In some embodiments, the display panel further includes:

an insulating separation layer disposed on the side of the transferlayer away from the substrate, the insulating separation layer has adensity greater than that of the transfer layer, an orthographicprojection of the insulating separation layer on the substrate coincideswith that of the transfer layer on the substrate, and the touchstructure is disposed on a side of the insulating separation layer awayfrom the transfer layer.

In some embodiments, the insulating separation layer includes alamination of one or more of a nitride layer of silicon, an oxide layerof silicon, and an oxynitride layer of silicon.

In some embodiments, the preset catalytic condition is an ultravioletcuring condition or a moisture curing condition.

In some embodiments, the substrate includes a display area and aperipheral area surrounding the display area, the peripheral areaincludes a pad area located on a side of the display area, and the touchstructure includes:

a pad located in the pad area;

a touch electrode pattern; and

a touch signal line located in the peripheral area, with one end of thetouch signal line coupled to the touch electrode pattern, and the otherend of the touch signal line coupled to the pad.

In some embodiments, the touch structure further includes a touchinsulating layer, the touch electrode pattern includes a plurality oftouch driving electrodes and a plurality of touch sensing electrodes,

the touch driving electrodes and the touch sensing electrodes arearranged crosswise, a position where the touch driving electrodes crossthe touch sensing electrodes is insulated and separated by the touchinsulating layer, and each touch driving electrode and each touchsensing electrode are correspondingly coupled to at least one touchsignal line.

In some embodiments, the touch driving electrodes and the touch sensingelectrodes are located in different layers.

In some embodiments, the touch driving electrode includes: a pluralityof driving electrode units arranged in a first direction, and a bridgeportion coupled between each two adjacent ones of the driving electrodeunits;

the touch sensing electrode includes a plurality of sensing electrodeunits arranged in a second direction, and a connection portion coupledbetween each two adjacent ones of the sensing electrode units; and

the first direction intersects the second direction, all of the drivingelectrode units, the bridge portion and the sensing electrode units arelocated on a side of the touch insulating layer away from the substrateand are arranged on a same layer, and the connection portion is locatedbetween the touch insulating layer and the encapsulation layer.

In some embodiments, the touch structure further includes: a firstground line and a second ground line located in the peripheral area,

one end of the first ground line is coupled to a corresponding pad inthe pad area, and the other end of the first ground line extends to aside of the display area away from the pad area;

one end of the second ground line is coupled to a corresponding pad inthe pad area, and the other end of the second ground line extends to theside of the display area away from the pad area; and

the first ground line and the second ground line form a semi-enclosedstructure surrounding the display area, and each touch signal line islocated between the first ground line and the second ground line.

In some embodiments, both the pad coupled to the first ground line andthe pad coupled to the second ground line are configured to load aground signal.

In some embodiments, the first ground line includes a first groundportion, the second ground line includes a second ground portion, boththe first ground portion and the second ground portion are located onthe side of the display area away from the pad area,

the first ground portion is not in contact with the second groundportion, and the first ground portion overlaps the second ground portionin a first direction that is a direction from the pad area to thedisplay area.

In some embodiments, the touch structure further includes: a first guardline and a second guard line,

one end of the first guard line is coupled to a corresponding pad in thepad area, and the other end of the first guard line extends to the sideof the display area away from the pad area;

one end of the second guard line is coupled to a corresponding pad inthe pad area, and the other end of the second guard line extends to theside of the display area away from the pad area; and

the first guard line and the second guard line form a semi-enclosedstructure surrounding the display area, the first guard line is locatedbetween a touch signal line closest to the first ground line and thefirst ground line, and the second guard line is located between a touchsignal line closest to the second ground line and the second groundline.

In some embodiments, both the pad coupled to the first guard line andthe pad coupled to the second guard line are configured to load analternating current signal.

In some embodiments, the first guard line includes a first guardportion, the second guard line includes a second guard portion, both thefirst guard portion and the second guard portion are located on the sideof the display area away from the pad area,

the first guard portion is not in contact with the second guard portion,and the first guard portion does not overlap the second guard portion ina first direction that is a direction from the pad area to the displayarea.

In some embodiments, the display panel further includes:

a buffer layer disposed on the substrate;

a semiconductor layer disposed on a side of the buffer layer away fromthe substrate;

a first gate insulating layer disposed on a side of the semiconductorlayer away from the substrate;

a first gate electrode layer disposed on a side of the first gateinsulating layer away from the substrate;

a second gate insulating layer disposed on a side of the first gateelectrode layer away from the substrate;

a second gate electrode layer disposed on a side of the second gateinsulating layer away from the substrate;

an interlayer insulating layer disposed on a side of the second gateelectrode layer away from the substrate;

a first source/drain conductive layer disposed on a side of theinterlayer insulating layer away from the substrate;

a passivation layer disposed on a side of the first source/drainconductive layer away from the substrate;

a first planarization layer disposed on a side of the passivation layeraway from the substrate;

a second source/drain conductive layer disposed on a side of the firstplanarization layer away from the substrate;

a second planarization layer disposed on a side of the secondsource/drain conductive layer away from the substrate; and

a pixel defining layer disposed on a side of the second planarizationlayer away from the substrate and including pixel openings in one-to-onecorrespondence with the light-emitting elements; and

each of the plurality of light-emitting elements includes: a firstelectrode, a light-emitting layer and a second electrode, the firstelectrode is located between the second planarization layer and thepixel defining layer, the light-emitting layer is located on a side ofthe first electrode away from the substrate, the light-emitting layer isdisposed in a corresponding pixel opening, the second electrode islocated on a side of the light-emitting layer away from the substrate,and the second electrodes of the plurality of light-emitting elementsare coupled as a whole to form a second electrode layer.

In a second aspect, an embodiment of the present disclosure provides amethod for manufacturing a display panel, including:

forming a plurality of light-emitting elements on a substrate;

forming an encapsulation layer on a side of the plurality oflight-emitting elements away from the substrate;

forming an organic adhesive layer on a bearing plate;

forming a touch structure on a side of the organic adhesive layer awayfrom the bearing plate, the touch structure being configured to detectoccurrence of a touch action;

separating the organic adhesive layer from the bearing plate, andtransferring the organic adhesive layer and the touch structure onto theencapsulation layer; and

applying a preset catalytic condition to the organic adhesive layer,such that the organic adhesive layer reacts chemically to enhanceadhesion and thus to be formed to a transfer layer, an adhesive forcebetween the transfer layer and the encapsulation layer being greaterthan that between the organic adhesive layer and the encapsulationlayer.

In some embodiments, between the forming the organic adhesive layer onthe bearing plate and the forming the touch structure on the side of theorganic adhesive layer away from the bearing plate, the method furtherincludes:

forming an insulating separation layer, the insulating separation layerhaving a density greater than that of the organic adhesive layer, and aportion of the insulating separation layer extending beyond a boundaryof the organic adhesive layer, such that the portion of the insulatingseparation layer extending beyond the boundary of the organic adhesivelayer is coupled to the bearing plate; and

between the forming the touch structure on the side of the organicadhesive layer away from the bearing plate and the separating theorganic adhesive layer from the bearing plate, the method furtherincludes:

removing at least the portion of the insulating separation layerextending beyond the boundary of the organic adhesive layer.

In some embodiments, the removing at least the part of the insulatingseparation layer extending beyond the boundary of the organic adhesivelayer includes:

cutting the insulating separation layer and the organic adhesive layeralong a preset cutting line, with the preset cutting line located on aside of the boundary of the organic adhesive layer close to a center ofthe organic adhesive layer.

In a third aspect, an embodiment of the present disclosure furtherprovides a display device, including the above display panel.

BRIEF DESCRIPTION OF DRAWINGS

The drawings are used to provide a further understanding of the presentdisclosure, constitute a part of specification, and explain the presentdisclosure with the following specific embodiments, but do notconstitute a limitation on the present disclosure. In the drawings:

FIG. 1 is a schematic structural diagram of a display panel according tosome embodiments of the present disclosure.

FIG. 2 is a plan view of a display panel according to some embodimentsof the present disclosure.

FIG. 3 is a sectional view taken along line AA′ in FIG. 2 .

FIG. 4 is a plan view of a display panel according to other embodimentsof the present disclosure.

FIG. 5 is a sectional view taken along line BB′ in FIG. 4 .

FIG. 6 is a flowchart illustrating a method for manufacturing a displaypanel according to some embodiments of the present disclosure.

FIG. 7A to FIG. 7M are schematic diagrams illustrating a process of amethod for manufacturing a display panel according to some embodimentsof the present disclosure.

DETAIL DESCRIPTION OF EMBODIMENTS

The specific embodiments of the present disclosure are described indetail below with reference to the drawings. It should be understoodthat the specific embodiments described herein are merely used toillustrate and explain the present disclosure, and are not intended tolimit the present disclosure.

To make the objectives, technical solutions and advantages of theembodiments of the present disclosure clearer, the technical solutionsof the embodiments of the present disclosure are described clearly andcompletely below with reference to the drawings of the embodiments ofthe present disclosure. It is obvious that the embodiments describedherein are some embodiments of the present disclosure, and not all ofthe embodiments. All other embodiments, which are obtained by thoseskilled in the art based on the described embodiments of the presentdisclosure without inventive work, are within the protection scope ofthe present disclosure.

The terms herein used for describing the embodiments of the presentdisclosure are not intended to restrict and/or limit the scope of thepresent disclosure. For example, unless otherwise defined, the technicalterms or scientific terms used in the present disclosure should havegeneral meanings that can be understood by those of ordinary skill inthe art. It should be understood that the words “first”, “second” andthe like used in the present disclosure do not denote any order,quantity, or importance, and are merely used to distinguish betweendifferent elements. Unless indicated clearly in the context otherwise,the singular form “a”, “an”, “the” or the like does not denotelimitation of quantity, but denote “at least one”. The word “include”,“comprise” or the like indicates that an element or object before theword covers elements, objects or the equivalents thereof listed afterthe word, but do not exclude other elements or objects. The word“connect”, “couple” or the like is not restricted to physical ormechanical connection, and may include electrical connection, whetherdirect or indirect. The words “on”, “under”, “left”, “right” and thelike are merely used to indicate relative positional relationships, andwhen an absolute position of a described object is changed, the relativepositional relationships may be changed accordingly.

In the following description, when an element or layer is referred to asbeing “on” or “connected to” another element or layer, the element orlayer may be directly on or connected to another element or layer, orthere may be intermediate elements or layers therebetween. However, whenan element or layer is referred to as being “directly on” or “directlyconnected to” another element or layer, there is no intermediate elementor layer therebetween. The term “and/or” includes one or more of any andall combinations of related listed items.

FIG. 1 is a schematic structural diagram of a display panel according tosome embodiments of the present disclosure. As shown in FIG. 1 , thedisplay panel includes a substrate SUB, a light-emitting structure layer10, an encapsulation layer EPL, a transfer layer 20, and a touchstructure 40, the light-emitting structure layer 10 includes a pluralityof light-emitting elements, the plurality of light-emitting elements andthe encapsulation layer EPL are disposed on the substrate SUB, and theplurality of light-emitting elements are located between theencapsulation layer EPL and the substrate SUB. The Light-emittingelements may be OLEDs, which may emit, for example, red light, greenlight, blue light, or white light. The encapsulation layer EPL isconfigured to encapsulate the light-emitting elements to prevent vaporand/or oxygen in external environment from eroding the light-emittingelements.

The transfer layer 20 is disposed on a side of the encapsulation layerEPL away from the substrate SUB and is bonded to the encapsulation layerEPL, and the transfer layer 20 is a film formed by a chemical reactionof an organic adhesive layer on the encapsulation layer EPL under apreset catalytic condition. The transfer layer 20 has great adhesion,and an adhesive force between the transfer layer 20 and theencapsulation layer EPL is greater than that between the organicadhesive layer and the encapsulation layer EPL. That is, the organicadhesive layer is configured to react chemically under the presetcatalytic condition to be formed to the transfer layer 20. Under acondition that the preset catalytic condition is not applied, there isno adhesive force between the organic adhesive layer and theencapsulation layer EPL, or there is a relatively small adhesive forcetherebetween; and after the preset catalytic condition is applied, theorganic adhesive layer reacts chemically to have an increased adhesion,and thus the adhesive force between the organic adhesive layer (i.e.,the transfer layer 20) subjected to the chemical reaction and theencapsulation layer EPL is increased. For example, the organic adhesivelayer is an incompletely cured organic composite film, and the organicadhesive layer is further cured under the preset catalytic condition tobe formed to be the transfer layer 20.

The touch structure 40 is disposed on a side of the transfer layer 20away from the substrate SUB and is configured to detect occurrence of atouch action. For example, the touch structure 40 includes a touchelectrode pattern and a touch signal line, the touch electrode patternreceives a touch driving signal and generates a touch sensing signalaccording to the touch action. For example, the touch structure 40 isconfigured to detect a touch position, touch force, and the like.

In a process of forming the touch electrode pattern and the touch signalline, a conductive material needs to be etched to form a requiredpattern. When the touch structure 40 is directly formed on theencapsulation layer EPL, damage is easily caused to the encapsulationlayer EPL and each structure between the encapsulation layer EPL and thesubstrate SUB during the etching process. Moreover, when the touchelectrode pattern is made of a transparent conductive material such asIndium Tin Oxide (ITO), the Indium Tin Oxide needs to be subjected tohigh-temperature annealing to reduce a resistance of the touch electrodepattern. When the Indium Tin Oxide is subjected to the high-temperatureannealing, damage is also easily caused to the encapsulation layer EPLand each structure between the encapsulation layer EPL and the substrateSUB.

In the embodiment of the present disclosure, the touch structure 40 isdisposed on the side of the transfer layer 20 away from the substrateSUB, and the transfer layer 20 is formed by the chemical reaction of theorganic adhesive layer on the encapsulation layer EPL under the presetcatalytic condition, and the adhesive force between the transfer layer20 and the encapsulation layer EPL is greater than that between theorganic adhesive layer and the encapsulation layer EPL. Therefore, in aprocess of manufacturing the display panel, first an organic adhesivelayer with relatively small adhesion may be formed on a bearing plate,next the touch structure 40 is formed on the organic adhesive layer, andthen the organic adhesive layer and the touch structure 40 aretransferred onto the encapsulation layer EPL, and the preset catalyticcondition is applied to the organic adhesive layer, so that the organicadhesive layer is formed into the transfer layer 20 tightly connected tothe encapsulation layer EPL. In this case, when the touch structure 40is manufactured, the etching process or the high-temperature annealingprocess of the touch structure 40 does not cause damage to theencapsulation layer EPL and film layers between the encapsulation layerEPL and the substrate SUB, thereby facilitating the improvement ofproduct yield of the display panel.

In some embodiments, the preset catalytic condition includes aphoto-curing (e.g., ultraviolet curing) condition or a moisture curingcondition.

In some embodiments, as shown in FIG. 1 , the display panel furtherincludes an insulating separation layer 30 which has a density greaterthan that of the transfer layer 20, an orthographic projection of theinsulating separation layer 30 on the substrate SUB coincides with thatof the transfer layer 20 on the substrate SUB, and the touch structure40 is disposed on a side of the insulating separation layer 30 away fromthe transfer layer 20. In the process of manufacturing the displaypanel, after the organic adhesive layer is formed on the bearing plate,an insulating separation layer 30 with a relatively high density may befurther formed, and a portion of the insulating separation layer 30 mayextend beyond a boundary of the organic adhesive layer, so that theportion of the insulating separation layer 30 extending beyond theboundary of the organic adhesive layer may be firmly connected to thebearing plate, and thus the organic adhesive layer is fixed on thebearing plate. When the organic adhesive layer is transferred onto theencapsulation layer, at least the portion of the insulating separationlayer 30 extending beyond the boundary of the organic adhesive layer isremoved, so as to separate the organic adhesive layer from the bearingplate.

It should be noted that FIG. 1 simply illustrates the positionalrelationships among the substrate SUB, the light-emitting structurelayer 10 (i.e., the plurality of light-emitting elements), theencapsulation layer EPL, the transfer layer 20, the insulatingseparation layer 30, and the touch structure 40, while the substrate SUBis not in direct contact with the light-emitting elements, and otherfilm layer are formed therebetween, which are described in detail below.

FIG. 2 is a plan view of a display panel according to some embodimentsof the present disclosure, FIG. 3 is a sectional view taken along lineAA′ in FIG. 2 , FIG. 4 is a plan view of a display panel according toother embodiments of the present disclosure, and FIG. 5 is a sectionalview taken along line BB′ in FIG. 4 . The display panel in theembodiment of the present disclosure is described below with referenceto FIG. 2 to FIG. 5 .

In some embodiments, the substrate SUB includes a display area DA and aperipheral area WA surrounding the display area DA, the peripheral areaWA includes a pad area BA located on a side of the display area DA, andthe touch structure 40 includes: a pad PAD, a touch electrode pattern(such as a touch driving electrode TX and a touch sensing electrode RXin FIG. 2 and FIG. 4 ), and a touch signal line TL. The pad PAD islocated in the pad area BA, the touch electrode pattern is substantiallylocated in the display area DA, and the touch signal line TL is locatedin the peripheral area WA. One end of the touch signal line TL isconnected to the touch electrode pattern, and the other end of the touchsignal line TL is connected to the pad PAD.

The pad PAD is not covered by any layer, thereby facilitating theelectric connection thereof to a flexible printed circuit board (FPCB).The FPCB is electrically connected to a touch driving chip andconfigured to transmit a signal from the touch driving chip. The touchsignal line TL is electrically connected to the pad PAD and the touchelectrode pattern, thereby realizing signal transmission between thetouch electrode pattern and the FPCB.

The touch electrode pattern may use a mutual capacitance type structureor a self-capacitance type structure. The embodiment of the presentdisclosure is described by taking the mutual capacitance type structureas an example.

As shown in FIG. 3 and FIG. 5 , the touch structure 40 further includesa touch insulating layer TLD, and a material of the touch insulatinglayer TLD may include an inorganic material such as silicon oxide(SiOx), silicon nitride (SiNx), and/or silicon oxynitride (SiON), andmay be formed as multiple layers or a single layer. It should be notedthat the touch insulating layer TLD may also be made of an organicmaterial.

The touch electrode pattern includes a plurality of touch drivingelectrodes TX and a plurality of touch sensing electrodes RX. The touchdriving electrodes TX and the touch sensing electrodes RX are arrangedcrosswise, a position where the touch driving electrodes TX cross thetouch sensing electrodes RX is insulated and separated by the touchinsulating layer TLD, and each touch driving electrode TX and each touchsensing electrode RX are correspondingly connected to at least one touchsignal line TL.

A touch capacitance is formed at the position where the touch drivingelectrode TX crosses the touch sensing electrode RX. When touch sensingis carried out, the touch driving chip sequentially supplies the touchdriving signals to the pads PAD corresponding to the plurality of touchdriving electrodes TX, so that the touch driving signals aresequentially applied to respective touch driving electrodes TX, and thecorresponding sensing signals are generated on the touch sensingelectrodes RX. When a touch occurs, like a human body or a touch penapproaches the touch area, the touch capacitance in the area changes,then the sensing signal of the touch sensing electrode RX at thecorresponding position changes, and thus the touch driving chipdetermines the touch position according to the changed sensing signal.

In some embodiments, as shown in FIG. 5 , the touch driving electrodesTX and the touch sensing electrodes RX are located in different layers.For example, both the touch driving electrodes TX and the touch sensingelectrodes RX are strip electrodes, and the touch insulating layer atleast covers the display area.

For example, both the touch driving electrode TX and the touch sensingelectrode RX are transparent electrodes; or both the touch drivingelectrode TX and the touch sensing electrode RX are metal meshelectrodes; or, one of the touch driving electrode TX and the touchsensing electrode RX is a transparent electrode, and the other is ametal mesh electrode. In some embodiments, the transparent electrode ismade of a transparent conductive material such as Indium Tin Oxide(ITO), and the metal mesh electrode is a mesh metal made of a metalmaterial such as aluminum or copper.

In other embodiments, as shown in FIG. 2 and FIG. 3 , the touch drivingelectrode TX includes: a plurality of driving electrode units TX1arranged in a first direction, and a bridge portion TX2 connectedbetween each two adjacent driving electrode units TX1. The touch sensingelectrode RX includes: a plurality of sensing electrode units RX1arranged in a second direction, and a connection portion RX2 connectedbetween each two adjacent sensing electrode units RX1. The firstdirection intersects the second direction, both the driving electrodeunits TX and the touch sensing electrode RX are located between thetouch insulating layer TLD and the encapsulation layer EPL and are inthe same layer, and the bridge portion TX2 is located between the touchinsulating layer TLD and the encapsulation layer EPL. For example, thefirst direction is a left-right direction in FIG. 2 , and the seconddirection is an up-down direction in FIG. 2 . It should be noted thatthe touch driving electrode TX and the touch sensing electrode RX shownin FIG. 2 and FIG. 3 are only exemplary and are not intended to limitthe present disclosure. For example, the connection portion RX2 may belocated on a side of the touch insulating layer TLD away from thesubstrate SUB, and the bridge portion TX2 may be located on a side ofthe touch insulating layer TLD close to the substrate SUB. For anotherexample, the adjacent driving electrode units TX1 are connected by theconnection portions RX2 arranged in different layers, and the adjacentsensing electrode units RX1 are connected by the bridge portions TX2arranged in the same layer.

For example, both the driving electrode unit TX1 and the sensingelectrode unit RX1 are transparent electrodes, or both the drivingelectrode unit TX1 and the sensing electrode unit RX1 are metal meshelectrodes. The bridge portion TX2 is made of a material same as that ofthe driving electrode unit TX1, and the connection portion RX2 may bemade of a metal material.

In some embodiments, as shown in FIG. 2 and FIG. 4 , the touch structure40 further includes: a first ground line GDL1 and a second ground lineGDL2 located in the peripheral area WA. One end of the first ground lineGDL1 is connected to a corresponding pad PAD in the pad area BA, and theother end of the first ground line GDL1 extends to a side of the displayarea DA away from the pad area BA. One end of the second ground lineGDL2 is connected to a corresponding pad PAD in the pad area BA, and theother end of the second ground line GDL2 extends to the side of thedisplay area DA away from the pad area BA. The first ground line GDL1and the second ground line GDL2 form a semi-enclosed structuresurrounding the display area DA, and each touch signal line TL islocated between the first ground line GDL1 and the second ground lineGDL2. Both the pad PAD connected to the first ground line GDL1 and thepad PAD connected to the second ground line GDL2 are configured to loada ground signal. Specifically, both the pad PAD connected to the firstground line GDL1 and the pad PAD connected to the second ground lineGDL2 are connected to a ground terminal on the touch driving chip, so asto prevent the touch electrode pattern and the touch signal line TL frombeing interfered by external static electricity or other interference.The end of the first ground line GDL1 not connected to the pad PAD andthe end of the second ground line GDL2 not connected to the pad PAD arearranged at an interval.

For example, the first ground line GDL1 includes a first ground portionlocated on the side of the display area DA away from the pad area BA,that is, the first ground portion is a portion of the first ground lineGDL1 located above the display area DA in FIG. 2 . The second groundline GDL2 includes a second ground portion located on the side of thedisplay area DA away from the pad area BA, that is, the second groundportion is a portion of the second ground line GDL2 located above thedisplay area DA in FIG. 2 . The first ground portion is not in contactwith the second ground portion, and the first ground portion overlapsthe second ground portion in a first direction, which is a directionfrom the pad area BA to the display area DA (i.e., a direction frombottom to top in FIG. 2 ). That is, a portion of the second groundportion is located above the first ground portion.

In some embodiments, as shown in FIG. 2 and FIG. 4 , the touch structure40 further includes: a first guard line Guard1 and a second guard lineGuard2. One end of the first guard line Guard1 is connected to acorresponding pad in the pad area BA, and the other end of the firstguard line Guard1 extends to the side of the display area DA away fromthe pad area BA. One end of the second guard line Guard2 is connected toa corresponding pad in the pad area BA, and the other end of the secondguard line Guard2 extends to the side of the display area DA away fromthe pad area BA. The first guard line Guard1 and the second guard lineGuard2 form a semi-enclosed structure surrounding the display area DA,the first guard line Guard1 is located between a touch signal line TLclosest to the first ground line GDL1 and the first ground line GDL1,and the second guard line Guard2 is located between a touch signal lineTL closest to the second ground line GDL2 and the second ground lineGDL2. Both the pad PAD connected to the first guard line Guard1 and thepad PAD connected to the second guard line Guard2 are configured to loadan alternating current signal, and the alternating current signal may beset by the touch driving chip according to the touch driving signal, soas to prevent the signal on the touch signal line TL from beinginterfered.

For example, the first guard line Guard1 includes a first guard portionlocated on the side of the display area DA away from the pad area BA,that is, the first guard portion is a portion of the first guard lineGuard1 located above the display area DA in FIG. 2 . The second guardline Guard2 includes a second guard portion located on the side of thedisplay area DA away from the pad area BA, that is, the second guardportion is a portion of the second guard line Guard2 located above thedisplay area DA in FIG. 2 . The first guard portion is not in contactwith the second guard portion, and the first guard portion does notoverlap the second guard portion in a first direction, which is thedirection from the pad area BA to the display area DA (i.e., a directionfrom bottom to top in FIG. 2 ).

In some embodiments, the substrate SUB is a flexible substrate SUB,which may be made of a flexible organic material, thereby facilitatingthe bending of the display panel. For example, the organic material is aresin material such as polyimide, polycarbonate, polyacrylate,polyetherimide, polyethersulfone, polyethylene terephthalate,polyethylene naphthalate, or the like.

As shown in FIG. 3 and FIG. 5 , a first buffer layer BFL1 is disposed onthe substrate SUB and configured to prevent or reduce diffusion of metalatoms and/or impurities from the substrate SUB into an active layer of atransistor. For example, a material of the first buffer layer BFL1 mayinclude an inorganic material such as silicon oxide (SiOx), siliconnitride (SiNx), and/or silicon oxynitride (SiON), and may be formed asmultiple layers or a single layer.

A semiconductor layer is disposed on the first buffer layer BFL1. Amaterial of the semiconductor layer may include, for example, aninorganic semiconductor material (e.g., polycrystalline silicon,amorphous silicon, or the like), an organic semiconductor material, andan oxide semiconductor material. The semiconductor layer includes anactive layer 51 of each transistor 50, the active layer 51 includes achannel portion and a source bridge portion and a drain bridge portionlocated on two sides of the channel portion, the source bridge portionis connected to a source 53 of the transistor 50, and the drain bridgeportion is connected to a drain 54 of the transistor 50. Both the sourcebridge portion and the drain bridge portion may be doped with impurities(e.g., N-type impurities or P-type impurities) having a higherconcentration than that of the impurities of the channel portion. Thechannel portion is directly opposite to a gate 52 of the transistor 50,and when a voltage signal applied to the gate 52 reaches a certainvalue, a carrier path is formed in the channel portion, so that thesource 53 and the drain 54 of the transistor 50 are turned on.

A first gate insulating layer GI1 is disposed on the semiconductorlayer, and a material of the first gate insulating layer GI1 may includea silicon compound and a metal oxide. For example, the material of thefirst gate insulating layer GI1 includes silicon oxynitride (SiON),silicon oxide (SiOx), silicon nitride (SiNx), silicon oxycarbide(SiOxCy), silicon carbonitride (SiCxNy), aluminum oxide (AlOx), aluminumnitride (AlNx), tantalum oxide (TaOx), hafnium oxide (HfOx), zirconiumoxide (ZrOx), titanium oxide (TiOx), and the like. In addition, thefirst gate insulating layer GI1 may be formed as a single layer ormultiple layers.

A first gate electrode layer G1 is disposed on the first gate insulatinglayer GI1. The first gate electrode layer G1 includes the gate 52 ofeach transistor 50, a first electrode plate 71 of a capacitor 70, andfurther includes a scan line (not shown in the Figure). A material ofthe first gate electrode layer G1 may include, for example, a metal, ametal alloy, a metal nitride, a conductive metal oxide, a transparentconductive material, and the like. For example, the material of thefirst gate electrode layer G1 may include gold (Au), an alloy of gold,silver (Ag), an alloy of silver, aluminum (Al), an alloy of aluminum,aluminum nitride (AlNx), tungsten (W), tungsten nitride (WNx), copper(Cu), an alloy of copper, nickel (Ni), chromium (Cr), chromium nitride(CrNx), molybdenum (Mo), an alloy of molybdenum, titanium (Ti), titaniumnitride (TiNx), platinum (Pt), tantalum (Ta), tantalum nitride (TaNx),neodymium (Nd), scandium (Sc), Strontium Ruthenium Oxide (SRO), zincoxide (ZnOx), tin oxide (SnOx), indium oxide (InOx), gallium oxide(GaOx), Indium Tin Oxide (ITO), Indium Zinc Oxide (IZO), and the like.The first gate electrode layer G1 may have a single layer or multiplelayers.

A second gate insulating layer GI2 is disposed on the first gateelectrode layer G1, and a material of the second gate insulating layerGI2 may include, for example, a silicon compound, a metal oxide. Forexample, the material of the second gate insulating layer GI2 mayinclude silicon oxynitride (SiON), silicon oxide (SiOx), silicon nitride(SiNx), silicon oxycarbide (SiOxCy), silicon carbonitride (SiCxNy),aluminum oxide (AlOx), aluminum nitride (AlNx), tantalum oxide (TaOx),hafnium oxide (HfOx), zirconium oxide (ZrOx), titanium oxide (TiOx), andthe like. The second gate insulating layer GI2 may be formed as a singlelayer or multiple layers.

A second gate electrode layer G2 is disposed on the second gateinsulating layer GI2. The second gate electrode layer G2 may include asecond electrode plate 72 of the capacitor 70. A material of the secondgate electrode layer G2 may include, for example, a metal, a metalalloy, a metal nitride, a conductive metal oxide, a transparentconductive material, and the like. For example, the material of the gateelectrode layer may include gold (Au), an alloy of gold, silver (Ag), analloy of silver, aluminum (Al), an alloy of aluminum, aluminum nitride(AlNx), tungsten (W), tungsten nitride (WNx), copper (Cu), an alloy ofcopper, nickel (Ni), chromium (Cr), chromium nitride (CrNx), molybdenum(Mo), an alloy of molybdenum, titanium (Ti), titanium nitride (TiNx),platinum (Pt), tantalum (Ta), tantalum nitride (TaNx), neodymium (Nd),scandium (Sc), Strontium Ruthenium Oxide (SRO), zinc oxide (ZnOx), tinoxide (SnOx), indium oxide (InOx), gallium oxide (GaOx), Indium TinOxide (ITO), Indium Zinc Oxide (IZO), and the like. The second gateelectrode layer G2 may have a single layer or multiple layers.

An interlayer insulating layer ILD is disposed on the second gateelectrode layer G2, and a material of the interlayer insulating layerILD may include, for example, a silicon compound, a metal oxide, and thelike. Specifically, the material may be selected from the siliconcompounds and metal oxides listed above, which is not repeatedlydescribed herein.

A first source/drain conductive layer SD1 is disposed on the interlayerinsulating layer ILD. The first source/drain conductive layer SD1 mayinclude the source 53 and the drain 54 of each transistor 50 in thedisplay area DA, the source 53 is electrically connected to the sourcebridge portion, and the drain 54 is electrically connected to the drainbridge portion. A material of the first source/drain conductive layerSD1 may include a metal, an alloy, a metal nitride, a conductive metaloxide, a transparent conductive material, and the like, for example, thefirst source/drain conductive layer SD1 may be a single layer ormultiple layers made of a metal, such as Mo/Al/Mo or Ti/Al/Ti. Thetransistor 50 shown in FIG. 3 and FIG. 5 includes the gate 52, thesource 53, the drain 54, and the active layer 51. In addition, the firstsource/drain conductive layer SD1 may further include a first powersupply line, a second power supply line, and a data line (not shown inthe Figure). Gate lines and the data lines divide the display area intoa plurality of pixel units, each pixel unit is provided with thelight-emitting element and a pixel driving circuit, the pixel drivingcircuit includes a plurality of transistors, and the transistor shown inFIG. 3 and FIG. 5 is one of the transistors in the pixel drivingcircuit. The first power supply line is configured to supply ahigh-level signal to the pixel circuit, and the second power supply lineis configured to supply a low-level signal to the light-emittingelements.

A passivation layer PVX is disposed on the first source/drain conductivelayer SD1, and a material of the passivation layer PVX may include asilicon compound, such as silicon oxide, silicon nitride, or siliconoxynitride.

A first planarization layer PLN1 is disposed on a side of thepassivation layer PVX away from the substrate SUB, and a surface of thefirst planarization layer PLN1 away from the substrate SUB issubstantially flat. The first planarization layer PLN1 is made of anorganic insulating material, for example, the organic insulatingmaterial includes a resin material such as polyimide, epoxy resin,acryl, polyester, photoresist, polyacrylate, polyamide, siloxane, or thelike. For another example, the organic insulating material includes anelastic material, such as urethane, thermoplastic polyurethane (TPU), orthe like.

A second source/drain conductive layer SD2 is disposed on a side of thefirst planarization layer PLN1 away from the substrate SUB. The secondsource/drain conductive layer SD2 may include a transfer electrode 60located in the display area DA. The transfer electrode 60 iselectrically connected to the drain 54 through penetrating via holes ofthe first planarization layer PLN1 and the passivation layer PVX, and inthe meantime, the transfer electrode 60 is electrically connected to afirst electrode 51 of the light-emitting element with a via holepenetrating the second planarization layer PLN2. The transfer electrode60 may prevent direct formation of a via hole having a relatively largediameter in the first planarization layer PLN1 and the secondplanarization layer PLN2, thereby improving the quality of theelectrical connection of the via hole. A material of the secondsource/drain conductive layer SD2 may include a metal, an alloy, a metalnitride, a conductive metal oxide, a transparent conductive material,and the like, for example, the second source/drain conductive layer SD2may be a single layer or multiple layers made of a metal, such asMo/Al/Mo or Ti/Al/Ti. The material of the second source/drain conductivelayer SD2 may be the same as or different from that of the firstsource/drain conductive layer SD1.

A second planarization layer PLN2 is disposed on the second source/drainconductive layer SD2 and covers the transfer electrode 60, and an uppersurface of the second planarization layer PLN2 is substantially flat.The second planarization layer PLN2 is made of an organic insulatingmaterial, for example, the organic insulating material includes a resinmaterial such as polyimide, epoxy resin, acryl, polyester, photoresist,polyacrylate, polyamide, siloxane, or the like. For another example, theorganic insulating material includes an elastic material, such asurethane, thermoplastic polyurethane (TPU), or the like. The material ofthe second planarization layer PLN2 may be the same as or different fromthat of the first planarization layer PLN1.

A pixel defining layer PDL is disposed on a side of the secondplanarization layer PLN2 away from the substrate SUB and includes pixelopenings in one-to-one correspondence with the light-emitting elements.A material of the pixel defining layer PDL may include an organicinsulating material such as polyimide, polyphthalimide, polyphthalamide,acrylic resin, benzocyclobutene, phenol resin, or the like.

A light-emitting element 11 includes a first electrode 11 a, alight-emitting layer 11 c, and a second electrode 11 b, the firstelectrode 11 a is located between the second planarization layer PLN2and the pixel defining layer PDL, the light-emitting layer 11 c islocated in a corresponding pixel opening, and the second electrode 11 bis located on a side of the light-emitting layer 11 c away from thesubstrate. The second electrodes 11 b of all the light-emitting elements11 in the display area DA are connected as a whole to form a secondelectrode layer. The first electrode 11 a is an anode of thelight-emitting element, and the second electrode 11 b is a cathode. Thefirst electrode 11 a is electrically connected to the transfer electrode60 with a via hole penetrating the second planarization layer PLN2, andthus is electrically connected to the drain 54 of the transistor 50. Thefirst electrode 51 may be made of, for example, a metal, a metal alloy,a metal nitride, a conductive metal oxide, a transparent conductivematerial, or the like. The first electrode 51 may be a single-layer or amulti-layer structure. A portion of the first electrode 51 is exposed bythe pixel opening.

The material of the light-emitting layer 11 c may include a smallmolecular organic material or a polymer molecular organic material, maybe a fluorescent luminescent material or a phosphorescent luminescentmaterial, and may emit red light, green light, blue light, or whitelight. The second electrode 11 b is located on the side of thelight-emitting layer 11 c away from the substrate SUB, and the secondelectrode 11 b may be made of a metal, a metal alloy, a metal nitride, aconductive metal oxide, a transparent conductive material, and the like.In the embodiment of the present disclosure, the light-emitting element11 may have a top-emission type structure or a bottom-emission typestructure. When the top-emission type structure is adopted, the firstelectrode 11 a includes a conductive material having a light reflectionproperty or includes a light reflection film, and the second electrode11 b includes a transparent or semi-transparent conductive material.When the bottom-emission type structure is adopted, the second electrode11 b includes a conductive material having a light reflection propertyor includes a light reflection film, and the first electrode 11 aincludes a transparent or semi-transparent conductive material.

It should be noted that the light-emitting element 11 may furtherinclude other film layers, for example, the light-emitting element 11may further include a hole injection layer and a hole transport layerlocated between the first electrode 11 a and the light-emitting layer 11c, and an electron transport layer and an electron injection layerlocated between the light-emitting layer 11 c and the second electrode11 b.

In some embodiments, the encapsulation layer EPL includes a firstinorganic encapsulation layer CVD1, a second inorganic encapsulationlayer CVD2, and an organic encapsulation layer IJP, the second inorganicencapsulation layer CVD2 is located on a side of the first inorganicencapsulation layer CVD1 away from the substrate SUB, the organicencapsulation layer IJP is located between the first inorganicencapsulation layer CVD1 and the second inorganic encapsulation layerCVD2. Both the first inorganic encapsulation layer CVD1 and the secondinorganic encapsulation layer CVD2 may be made of an inorganic materialwith a high density, such as silicon oxynitride (SiON), silicon oxide(SiOx), and silicon nitride (SiNx). The organic encapsulation layer IJPmay be made of a polymer material containing a desiccant or a polymermaterial capable of blocking vapor. For example, the organicencapsulation layer IJP may be made of a polymer resin, so that stressof the first inorganic encapsulation layer CVD1 and the second inorganicencapsulation layer CVD2 may be relieved, and a water-absorbing materialsuch as a desiccant may be included to absorb substances such as water,oxygen and the like eroding into the interior.

An overlaying layer OC is disposed on a side of the touch structure 40away from the substrate SUB. The overlaying layer OC covers the touchdriving electrode TX, the touch sensing electrode RX, the touch signalline TL, the first ground line GDL1, and the second ground line GDL2. Amaterial of the overlaying layer OC may include an inorganic insulatingmaterial or an organic insulating material.

In the embodiment of the present disclosure, the flexible substrate SUBis provided with the first gate insulating layer GI1, the second gateinsulating layer GI2, and the buffer layer BFL. However, it can beunderstood that in some examples, these layers may be omitted or addedaccording to actual needs, which is not specifically limited by thepresent disclosure.

In addition, in some examples, the second planarization layer PNL2 andthe transfer electrode 60 may be omitted. In this case, the firstelectrode 11 a is disposed directly on the first planarization layerPNL1, and is electrically connected to the drain 54 through the via holein the PNL1.

An embodiment of the present disclosure further provides a method formanufacturing the display panel, and FIG. 6 is a flowchart illustratinga method for manufacturing a display panel according to some embodimentsof the present disclosure. As shown in FIG. 6 , the manufacturing methodincludes the following steps.

At step S11, a plurality of light-emitting elements are formed on asubstrate.

At step S12, an encapsulation layer is formed on a side of the pluralityof light-emitting elements away from the substrate.

At step S13, an organic adhesive layer is formed on a bearing plate.

At step S14, a touch structure is formed on a side of the organicadhesive layer away from the bearing plate and is configured to detectoccurrence of a touch action.

At step S15, the organic adhesive layer is separated from the bearingplate, and the organic adhesive layer and the touch structure aretransferred onto the encapsulation layer.

At step S16, a preset catalytic condition is applied to the organicadhesive layer, so that the organic adhesive layer reacts chemically toenhance adhesion and thus to be formed to a transfer layer, and anadhesive force between the transfer layer and the encapsulation layer isgreater than that between the organic adhesive layer and theencapsulation layer.

In the embodiment of the present disclosure, the touch structure isdirectly manufactured on the encapsulation layer, so that an etchingprocess and a high-temperature annealing process of the touch structuredo not cause damage to the encapsulation layer and films between theencapsulation layer and the substrate, thereby facilitating theimprovement of product yield of the display panel.

It should be noted that, in the embodiment of the present disclosure,the sequence of the step S13 and the steps S11 and S12 is notparticularly limited, and the step S13 may be performed before the stepsS11 to S12, or may be performed after the steps S11 to S12.

In some embodiments, the preset catalytic condition includes aphoto-curing (e.g., ultraviolet curing) condition or a moisture curingcondition.

In some embodiments, the bearing plate is made of a material with highstrength and high temperature resistance, for example, the bearing plateis a glass substrate.

In some embodiments, between the steps S13 and S14, the manufacturingmethod further includes: a step S131, at which an insulating separationlayer is formed and has a density greater than that of the organicadhesive layer, and a portion of the insulating separation layer extendsbeyond a boundary of the organic adhesive layer, so that the portion ofthe insulating separation layer extending beyond the boundary of theorganic adhesive layer is connected to the bearing plate, such that theinsulating separation layer and the organic adhesive layer are stablyfixed on the bearing plate, thereby facilitating the formation of thetouch structure.

In some embodiments, the insulating separation layer includes alamination of one or more of a nitride layer of silicon, an oxide layerof silicon, and an oxynitride layer of silicon. For example, theinsulating separation layer is formed by plasma enhanced chemical vapordeposition (PECVD).

Between the steps S14 and S15, the manufacturing method furtherincludes: a step S141, at which at least the portion of the insulatingseparation layer extending beyond the boundary of the organic adhesivelayer is removed, so as to separate the organic adhesive layer from thebearing plate. In some embodiments, the step S141 specifically includescutting the insulating separation layer and the organic adhesive layeralong a preset cutting line, and the cutting line is located on an innerside of the boundary of the organic adhesive layer.

FIG. 7A to FIG. 7M are schematic diagrams illustrating a process of amethod for manufacturing a display panel according to some embodimentsof the present disclosure. As shown in FIG. 7A to FIG. 7M, the methodfor manufacturing the display panel includes the following steps.

At step S21 a, a buffer layer BFL is formed on a substrate, as shown inFIG. 7A.

At step S21 b, as shown in FIG. 7B, a semiconductor layer is formed on aside of the buffer layer BFL away from the substrate SUB. Thesemiconductor layer includes an active layer 51 of each transistor, andthe active layer 51 includes a channel portion and a source bridgeportion and a drain bridge portion located on two sides of the channelportion.

In some embodiments, the semiconductor layer is formed by sputtering,thermal evaporation, plasma enhanced chemical vapor deposition (PECVD),low pressure chemical vapor deposition (LPCVD), atmospheric pressurechemical vapor deposition (APCVD), or electron cyclotron resonancechemical vapor deposition (ECR-CVD).

At step S21 c, as shown in FIG. 7C, then, a first gate insulating layerGI1 is formed on a side of the semiconductor layer away from thesubstrate SUB; then, a first gate electrode layer G1 is formed on a sideof the first gate insulating layer GI1 away from the substrate SUB;then, a second gate insulating layer GI2 is formed on a side of thefirst gate electrode layer G1 away from the substrate SUB; then, asecond gate electrode layer G2 is formed on a side of the second gateinsulating layer GI2 away from the substrate SUB; then, an interlayerinsulating layer ILD is formed on a side of the second gate electrodelayer G2 away from the substrate SUB; and then, a first source/drainconductive layer SD1 is formed on a side of the interlayer insulatinglayer ILD away from the substrate SUB.

The first gate electrode layer G1 includes a gate 52 of each transistor50 and a first electrode plate 71 of a capacitor 70. The second gateelectrode layer may include a second electrode plate 72 of the capacitor70.

Reference is made to the above description for the materials of thefirst gate insulating layer GI1, the first gate electrode layer G1, thesecond gate insulating layer GI2, the second gate electrode layer G2,the interlayer insulating layer ILD, and the first source/drainconductive layer SD1, which is not repeatedly described herein. In someembodiments, the first gate electrode layer G1, the second gateelectrode layer G2, and the first source/drain conductive layer SD1 areformed by a physical vapor deposition method such as magnetronsputtering. The first gate insulating layer, the second gate insulatinglayer GI2, and the interlayer insulating layer ILD are formed by PECVD.The first source/drain conductive layer SD1 may include a source 53 anda drain 54 of each transistor in a display region, the source 53 isconnected to the source bridge portion of the active layer 51 throughthe via hole penetrating the interlayer insulating layer ILD, the secondgate insulating layer GI2 and the first gate insulating layer GI1, andthe drain 54 is connected to the drain bridge portion of the activelayer 51 through the via hole penetrating the interlayer insulatinglayer ILD, the second gate insulating layer GI2 and the first gateinsulating layer GI1.

At step S21 d, as shown in FIG. 7D, a passivation layer PVX is formed ona side of the first source/drain conductive layer SD1 away from thesubstrate SUB, and then a first planarization layer PLN1 is formed.

At step S21 e, as shown in FIG. 7E, a second source/drain conductivelayer SD2 is formed on a side of the first planarization layer PLN1 awayfrom the substrate SUB. The second source/drain conductive layer SD2includes a transfer electrode 60, and the transfer electrode 60 iselectrically connected to the drain 54 through a via hole penetratingthe first planarization layer PLN1 and the passivation layer PVX.Reference is made to the above description for a material of the secondsource/drain conductive layer SD2, which is not repeatedly describedherein.

At step S21 f, as shown in FIG. 7F, a second planarization layer PLN2 isformed on a side of the second source/drain conductive layer SD2 awayfrom the substrate SUB.

At step S21 g, as shown in FIG. 7G, a first electrode 11 a of each of aplurality of light-emitting elements is formed. The first electrode 11 ais connected to the transfer electrode 60 through a via hole in thesecond planarization layer PLN2.

At step S21 h, as shown in FIG. 7H, a pixel defining layer PDL is formedon a side of the second planarization layer PLN2 away from the substrateSUB and includes pixel openings V in one-to-one correspondence with thelight-emitting elements. The first electrode 11 a of the light-emittingelement is located between the second planarization layer PLN2 and thepixel defining layer PDL, and a portion of the first electrode 11 a isexposed by a corresponding pixel opening V.

At step S21 i, as shown in FIG. 7I, a light-emitting layer 11 c of eachof the plurality of light-emitting elements 11 is formed, and thelight-emitting layer 11 c is located on a side of the first electrode 11a away from the substrate SUB and is located in a corresponding pixelopening. The light-emitting layer 11 c may be formed by evaporation.Then, a second electrode 11 b of each of the plurality of light-emittingelements 11 is formed, and the second electrodes 11 b of the pluralityof light-emitting elements 11 are connected as a whole to form a secondelectrode layer.

The step of forming the plurality of light-emitting elements includesthe above steps S21 g and S21 i.

The second source/drain conductive layer SD2, the first electrode 11 a,and the second electrode 11 b may be formed by a physical vapordeposition method such as magnetron sputtering. The first planarizationlayer PLN1, the second planarization layer PLN2, and the pixel defininglayer PDL may be formed by inkjet printing.

At step S22, as shown in FIG. 7J, an encapsulation layer EPL is formedon a side of the plurality of light-emitting elements 11 away from thesubstrate SUB. The encapsulation layer EPL includes a first inorganicencapsulation layer CVD1, a second inorganic encapsulation layer CVD2,and an organic encapsulation layer IJP located between the firstinorganic encapsulation layer CVD1 and the second inorganicencapsulation layer CVD2.

At step S23, as shown in FIG. 7K, an organic adhesive layer 21 and aninsulating separation layer 30 are sequentially formed on a bearingplate 80, the insulating separation layer 30 has a density greater thanthat of the organic adhesive layer 21, and a portion of the insulatingseparation layer 30 extends beyond a boundary of the organic adhesivelayer 21, so that the portion of the insulating separation layer 30extending beyond the boundary of the organic adhesive layer 21 isconnected to the bearing plate 80. For example, the insulatingseparation layer includes a lamination of one or more of a nitride layerof silicon, an oxide layer of silicon, and an oxynitride layer ofsilicon.

At step S24, as shown in FIG. 7L, a touch structure 40 is formed on aside of the insulating separation layer 30 away from the bearing plate80. Specifically, the touch structure 40, as shown in FIG. 2 and FIG. 4, includes a pad PAD, a touch electrode pattern (i.e., a touch drivingelectrode TX and a touch sensing electrode RX), a touch signal line TL,and a touch insulating layer TLD. Accordingly, the step S24 includesforming the pad PAD, the touch electrode pattern, and the touch signalline TL on a side of the insulating separation layer 30 away from thebearing plate 80. The pad PAD is located at a position of the organicadhesive layer 21 corresponding to a pad area PAD; one end of each of aplurality of touch signal lines TL is connected to the touch electrodepattern, and the other end of each touch signal line TL is connected toa pad PAD. Furthermore, specifically, the touch electrode patternincludes a plurality of touch driving electrodes TX and a plurality oftouch sensing electrodes RX, and the touch driving electrodes TX and thetouch sensing electrodes RX are arranged crosswise and are insulated andseparated. Each touch driving electrode TX and each touch sensingelectrode RX are correspondingly connected to at least one touch signalline TL. The step S24 further includes forming the touch insulatinglayer TLD in FIG. 2 or FIG. 5 , and a position where the touch drivingelectrodes TX cross the touch sensing electrodes RX are insulated andseparated by the touch insulating layer TLD.

In some embodiment, as shown in FIG. 5 , the touch driving electrodes TXand the touch sensing electrodes RX are located in different layers.

In other embodiments, as shown in FIG. 3 , the touch driving electrodeTX includes: a plurality of driving electrode units TX1 arranged in afirst direction, and a bridge portion TX2 connected between each twoadjacent driving electrode units TX1. The touch sensing electrode RXincludes: a plurality of sensing electrode units RX1 arranged in asecond direction, and a connection portion RX2 connected between eachtwo adjacent sensing electrode units RX1. The first direction intersectsthe second direction, both the driving electrode units TX and the touchsensing electrode RX are located between the touch insulating layer TLDand the encapsulation layer EPL, and the bridge portion TX2 is locatedbetween the touch insulating layer TLD and the encapsulation layer EPL,that is, the driving electrode unit TX1 is formed prior to the bridgeportion TX2.

In addition, in some embodiments, the step S25 further includes forminga first ground line and a second ground line. The positions and theconnection relationship of the first ground line and the second groundline are shown in FIG. 3 and FIG. 5 , one end of the first ground lineGDL1 is connected to a corresponding pad PAD, and the other end of thefirst ground line GDL1 extends to a side of the touch electrode patternaway from a pad area BA; one end of the second ground line GDL2 isconnected to a corresponding pad PAD, and the other end of the secondground line GDL2 extends to the side of the touch electrode pattern awayfrom the pad area BA; and the first ground line GDL1 and the secondground line GDL2 form a semi-enclosed structure surrounding the touchelectrode pattern, and each touch signal line TL is located between thefirst ground line GDL1 and the second ground line GDL2.

In addition, the step S24 may further include forming a first guard lineGuard1 and a second guard line Guard2. The connection relationshipbetween the first guard line Guard1 and the second guard line Guard2 isdescribed above and thus is not repeatedly described herein. The firstguard line Guard1 and the second guard line Guard2 may be manufacturedin synchronization with the first ground line GDL1 and the second groundline GDL2.

At step S25, at least the portion of the insulating separation layer TLDextending beyond the boundary of the organic adhesive layer 21 isremoved. In some embodiments, as shown in FIG. 7L, the step S25 includescutting the insulating separation layer 30 and the organic adhesivelayer 21 along a preset cutting line CL, and the preset cutting line CLis located on a side of the boundary of the organic adhesive layer 21close to a center of the organic adhesive layer.

At step S26, the organic adhesive layer 21 is separated from the bearingplate 80, and the organic adhesive layer 21 and the touch structure 40are transferred onto the encapsulation layer EPL; then, a presetcatalytic condition is applied to the organic adhesive layer 21, so thatthe organic adhesive layer 21 reacts chemically to be formed to atransfer layer 20, and an adhesive force between the transfer layer 20and the encapsulation layer EPL is greater than that between the organicadhesive layer 21 and the encapsulation layer EPL, as shown in FIG. 7M.

Then, an overlaying layer OC is formed. Certainly, the overlaying layermay be formed prior to step S26.

An embodiment of the present disclosure further provides a displaydevice, including the display panel of any one of the above embodiments.The display device may be any product or component with a displayfunction, such as an OLED panel, a mobile phone, a tablet computer, atelevision, a display, a laptop, a digital photo frame, a navigator andthe like.

It should be understood that the above embodiments are merely exemplaryembodiments that are employed to illustrate the principles of thepresent disclosure, and that the present disclosure is not limitedthereto. Various changes and modifications can be made by those skilledin the art without departing from the spirit and essence of the presentdisclosure, and should be considered to fall within the protection scopeof the present disclosure.

What is claimed is:
 1. A display panel, comprising: a substrate; aplurality of light-emitting elements and an encapsulation layer on thesubstrate, wherein the plurality of light-emitting elements are betweenthe encapsulation layer and the substrate; a transfer layer on a side ofthe encapsulation layer away from the substrate and bonded to theencapsulation layer, wherein an adhesive force between the transferlayer and the encapsulation layer is greater than that between anorganic adhesive layer and the encapsulation layer, and the organicadhesive layer is configured to react chemically under a presetcatalytic condition to be formed to the transfer layer; and a touchstructure on a side of the transfer layer away from the substrate andconfigured to detect occurrence of a touch action, wherein the substratecomprises a display area and a peripheral area surrounding the displayarea, the peripheral area comprises a pad area on a side of the displayarea, and the touch structure comprises: a pad in the pad area, a touchelectrode pattern, a touch signal line in the peripheral area, whereinone end of the touch signal line is connected to the touch electrodepattern, and the other end of the touch signal line is connected to thepad, and a first ground line and a second ground line in the peripheralarea, wherein one end of the first ground line is coupled to acorresponding pad in the pad area, and the other end of the first groundline extends to a side of the display area away from the pad area, oneend of the second ground line is coupled to a corresponding pad in thepad area, and the other end of the second ground line extends to theside of the display area away from the pad area, and the first groundline and the second ground line form a semi-enclosed structuresurrounding the display area, and each touch signal line is between thefirst ground line and the second ground line, wherein the first groundline comprises a first ground portion, the second ground line comprisesa second ground portion, both the first ground portion and the secondground portion are in a portion of the peripheral area, the portion ofthe peripheral area and the pad area being at two opposite sides of thedisplay area, the first ground portion is not in contact with the secondground portion, and when viewed in a plan view, the first ground portionoverlaps the second ground portion in a direction that is perpendicularto an extending direction of the first and second ground portions. 2.The display panel of claim 1, further comprising: an insulatingseparation layer on the side of the transfer layer away from thesubstrate, wherein the insulating separation layer has a density greaterthan that of the transfer layer, an orthographic projection of theinsulating separation layer on the substrate coincides with that of thetransfer layer on the substrate, and the touch structure is on a side ofthe insulating separation layer away from the transfer layer.
 3. Thedisplay panel of claim 2, wherein the insulating separation layercomprises a lamination of one or more of a nitride layer of silicon, anoxide layer of silicon, and an oxynitride layer of silicon.
 4. Thedisplay panel of claim 1, wherein the preset catalytic condition is anultraviolet curing condition or a moisture curing condition.
 5. Thedisplay panel of claim 1, wherein the touch structure further comprisesa touch insulating layer, the touch electrode pattern comprises aplurality of touch driving electrodes and a plurality of touch sensingelectrodes, and the touch driving electrodes and the touch sensingelectrodes are arranged crosswise, a position where the touch drivingelectrodes cross the touch sensing electrodes is insulated and separatedby the touch insulating layer, and each touch driving electrode and eachtouch sensing electrode are correspondingly connected to at least onetouch signal line.
 6. The display panel of claim 5, wherein the touchdriving electrodes and the touch sensing electrodes are in differentlayers.
 7. The display panel of claim 5, wherein the touch drivingelectrode comprises a plurality of driving electrode units arranged in afirst direction, and a bridge portion connected between each twoadjacent ones of driving electrode units, the touch sensing electrodecomprises a plurality of sensing electrode units arranged in a seconddirection, and a connection portion connected between each two adjacentones of the sensing electrode units, and the first direction intersectsthe second direction, all of the driving electrode units, the bridgeportion and the sensing electrode units are on a side of the touchinsulating layer away from the substrate and are arranged in a samelayer, and the connection portion is between the touch insulating layerand the encapsulation layer.
 8. The display panel of claim 1, whereinboth the pad coupled to the first ground line and the pad coupled to thesecond ground line are configured to load a ground signal.
 9. Thedisplay panel of claim 1, wherein the touch structure further comprises:a first guard line and a second guard line, one end of the first guardline is coupled to a corresponding pad in the pad area, and the otherend of the first guard line extends to the side of the display area awayfrom the pad area, one end of the second guard line is coupled to acorresponding pad in the pad area, and the other end of the second guardline extends to the side of the display area away from the pad area, andthe first guard line and the second guard line form a semi-enclosedstructure surrounding the display area, the first guard line is betweena touch signal line closest to the first ground line and the firstground line, and the second guard line is between a touch signal lineclosest to the second ground line and the second ground line.
 10. Thedisplay panel of claim 9, wherein both the pad coupled to the firstguard line and the pad coupled to the second guard line are configuredto load an alternating current signal.
 11. The display panel of claim 9,wherein the first guard line comprises a first guard portion, the secondguard line comprises a second guard portion, both the first guardportion and the second guard portion are on the side of the display areaaway from the pad area, and the first guard portion is not in contactwith the second guard portion, the first guard portion does not overlapthe second guard portion in a first direction that is a direction fromthe pad area to the display area.
 12. The display panel of claim 1,further comprising: a buffer layer on the substrate; a semiconductorlayer on a side of the buffer layer away from the substrate; a firstgate insulating layer on a side of the semiconductor layer away from thesubstrate; a first gate electrode layer on a side of the first gateinsulating layer away from the substrate; a second gate insulating layeron a side of the first gate electrode layer away from the substrate; asecond gate electrode layer on a side of the second gate insulatinglayer away from the substrate; an interlayer insulating layer on a sideof the second gate electrode layer away from the substrate; a firstsource/drain conductive layer on a side of the interlayer insulatinglayer away from the substrate; a passivation layer on a side of thefirst source/drain conductive layer away from the substrate; a firstplanarization layer on a side of the passivation layer away from thesubstrate; a second source/drain conductive layer on a side of the firstplanarization layer away from the substrate; a second planarizationlayer on a side of the second source/drain conductive layer away fromthe substrate; and a pixel defining layer on a side of the secondplanarization layer away from the substrate and comprising pixelopenings in one-to-one correspondence with the light-emitting elements,wherein each of the plurality of light-emitting elements comprises afirst electrode, a light-emitting layer and a second electrode, thefirst electrode is between the second planarization layer and the pixeldefining layer, the light-emitting layer is on a side of the firstelectrode away from the substrate, the light-emitting layer is in acorresponding one of the pixel openings, the second electrode is on aside of the light-emitting layer away from the substrate, and the secondelectrodes of the plurality of light-emitting elements are coupled as awhole to form a second electrode layer.
 13. A method for manufacturing adisplay panel, comprising: forming a plurality of light-emittingelements on a substrate; forming an encapsulation layer on a side of theplurality of light-emitting elements away from the substrate; forming anorganic adhesive layer on a bearing plate; forming a touch structure ona side of the organic adhesive layer away from the bearing plate,wherein the touch structure is configured to detect occurrence of atouch action; separating the organic adhesive layer from the bearingplate, and transferring the organic adhesive layer and the touchstructure onto the encapsulation layer; and applying a preset catalyticcondition to the organic adhesive layer, so that the organic adhesivelayer reacts chemically to enhance adhesion to be formed to a transferlayer, wherein an adhesive force between the transfer layer and theencapsulation layer is greater than that between the organic adhesivelayer and the encapsulation layer, wherein between the forming theorganic adhesive layer on the bearing plate and the forming the touchstructure on the side of the organic adhesive layer away from thebearing plate, the method further comprises: forming an insulatingseparation layer, wherein the insulating separation layer has a densitygreater than that of the organic adhesive layer, and a portion of theinsulating separation layer extends beyond a boundary of the organicadhesive layer, so that the portion of the insulating separation layerextending beyond the boundary of the organic adhesive layer is coupledto the bearing plate, and wherein between the forming the touchstructure on the side of the organic adhesive layer away from thebearing plate and the separating the organic adhesive layer from thebearing plate, the method further comprises: removing at least theportion of the insulating separation layer extending beyond the boundaryof the organic adhesive layer, wherein the removing at least the portionof the insulating separation layer extending beyond the boundary of theorganic adhesive layer comprises: cutting the insulating separationlayer and the organic adhesive layer along a preset cutting line,wherein the preset cutting line is on a side of the boundary of theorganic adhesive layer close to a center of the organic adhesive layer.14. A display device, comprising the display panel of claim 1.